Abstract:Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detailed noise analysis, and show that the resistance switching from high-resistance to low-resistance is accompanied by a semiconductor-to-metal transition mediated by the accumulation of oxygen-vacancies in the conduction path. Specifically, pronounced random-telegraph noise (RTN) with values up to 25% was observed in the device high-resistance state (HRS) but not in the low-resistance state (LRS). Through time-domain and temperature dependent analysis, we show that the RTN effect shares the same origin as the resistive switching effects, and both can be traced to the (re) distribution of oxygen vacancies (V(O)s). From noise and transport analysis we further obtained the density of states and average distance of the V(O)s at different resistance states, and developed a unified model to explain the conduction in both the HRS and the LRS and account for the resistance switching effects in these devices. Significantly, it was found that even though the conduction channel area is larger in the HRS, during resistive switching a localized region gains significantly higher V-O and dominates the conduction process. These findings reveal the complex dynamics involved during resistive switching and will help guide continued optimization in the design and operation of this important emerging device class.

Unveiling switching mechanisms in RRAMs

Device Simulation and Modeling of RRAM Switching Processes

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

A Physics-based Compact Model for Set Process of Resistive Random Access Memory (RRAM) with Graphene Electrode

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The storage mechanism of resisitive random access

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Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Investigation of Resistive Switching Mechanisms in Ti/TiO<i><sub>x</sub></i>/Pd-Based RRAM Devices

An overview of the switching parameter variation of RRAM

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

Resistive Random Access Memory and Its Applications in Storage and Nonvolatile Logic

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

High-throughput phase-field simulations and machine learning of resistive switching in resistive random-access memory

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Anatomy of Resistive Switching Behavior in Titanium Oxide Based RRAM Device

Random telegraph noise and resistance switching analysis of oxide based resistive memory.

An Overview of Resistive Random Access Memory Devices