Abstract:The recent co-optimization of memristive technologies and programming algorithms enabled neural networks training with in-memory computing systems. In this context, novel analog filamentary conductive-metal-oxide (CMO)/HfO x redox-based resistive switching memory (ReRAM) represents a key technology. Despite device performance enhancements reported in literature, the underlying mechanism behind resistive switching is not fully understood. This work presents the first physics-based analytical model of the current transport and of the resistive switching in these devices. As a case study, analog TaO x /HfO x ReRAM devices are considered. The current transport is explained by a trap-to-trap tunneling process, and the resistive switching by a modulation of the defect density within the sub-band of the TaO x that behaves as electric field and temperature confinement layer. The local temperature and electric field distributions are derived from the solution of the electric and heat transport equations in a 3D finite element ReRAM model. The intermediate resistive states are described as a gradual modulation of the TaO x defect density, which results in a variation of its electrical conductivity. The drift-dynamics of ions during the resistive switching is analytically described, allowing the estimation of defect migration energies in the TaO x layer. Moreover, the role of the electro-thermal properties of the CMO layer is unveiled. The proposed analytical model accurately describes the experimental switching characteristic of analog TaO x /HfO x ReRAM devices, increasing the physical understanding and providing the equations necessary for circuit simulations incorporating this technology.

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Resistive switching in Nb-doped SrZrO3 memory films: An effective approach with a Cu modulation layer

A Physical Model for Bipolar Oxide-Based Resistive Switching Memory Based on Ion-Transport-recombination Effect

A Unified Physical Model of Switching Behavior in Oxide-Based RRAM

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

A Simplified Model for Resistive Switching of Oxide-Based Resistive Random Access Memory Devices

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Thermoelectric Seebeck Effect in Oxide-Based Resistive Switching Memory.

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Stochastic simulation of forming SET and RESET process for transition metal oxide-based resistive switching memory

Physical Understanding and Optimization of Resistive Switching Characteristics in Oxide-Rram.

Oxide Heterostructure Resistive Memory.

Unipolar Resistive Switching and Mechanism in Gd-doped-TiO2-based Resistive Switching Memory Devices

Understanding the resistance switching mechanisms of binary metal oxides with the percolation model

Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Analytical modelling of the transport in analog filamentary conductive-metal-oxide/HfO x ReRAM devices