Abstract:Oxides-based resistive switching memory induced by oxygen ions migration is attractive for future nonvolatile memories. Numerous works had focused their attentions on the sandwiched oxide materials for depressing the characteristic variations, but the comprehensive studies of the dependence of electrodes on the migration behavior of oxygen ions are overshadowed. Here, we investigated the interaction of various metals (Ni, Co, Al, Ti, Zr, and Hf) with oxygen atoms at the metal/Ta2O5 interface under electric stress and explored the effect of top electrode on the characteristic variations of Ta2O5-based memory device. It is demonstrated that chemically inert electrodes (Ni and Co) lead to the scattering switching characteristics and destructive gas bubbles, while the highly chemically active metals (Hf and Zr) formed a thick and dense interfacial intermediate oxide layer at the metal/Ta2O5 interface, which also degraded the resistive switching behavior. The relatively chemically active metals (Al and Ti) can absorb oxygen ions from the Ta2O5 film and avoid forming the problematic interfacial layer, which is benefit to the formation of oxygen vacancies composed conduction filaments in Ta2O5 film thus exhibit the minimum variations of switching characteristics. The clarification of oxygen ions migration behavior at the interface can lead further optimization of resistive switching performance in Ta2O5-based memory device and guide the rule of electrode selection for other oxide-based resistive switching memories.

Understanding the resistance switching mechanisms of binary metal oxides with the percolation model

Resistive Switching Behaviors And Mechanism Of Transition Metal Oxides-Based Memory Devices

A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO2/Al memory

Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Oxide-based RRAM Switching Mechanism: A New Ion-Transport-recombination Model

A Physical Model for Bipolar Oxide-Based Resistive Switching Memory Based on Ion-Transport-recombination Effect

Study of Conduction and Switching Mechanisms in Al/Alox/Wox/W Resistive Switching Memory for Multilevel Applications

Stochastic simulation of forming SET and RESET process for transition metal oxide-based resistive switching memory

Resistance switching memory in perovskite oxides

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Oxide Heterostructure Resistive Memory.

Characteristics and Mechanism of Conduction/set Process in TiN∕ZnO∕Pt Resistance Switching Random-Access Memories

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

Thermoelectric Seebeck Effect in Oxide-Based Resistive Switching Memory.

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Conduction mechanism and impedance analysis of HfO x -based RRAM at different resistive states

Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory

Co-existed Unipolar and Bipolar Resistive Switching Effect of HfOx-based RRAM

Interfacial reaction induced digital-to-analog resistive switching in TiO2-based memory devices

Novel hypostasis of old materials in oxide electronics: metal oxides for resistive random access memory applications