Abstract:This paper employs theoretic methods to gain a deep insight into the resistance switching phenomena emerging in a representative redox‐based random access memory cell. The application of a powerful analysis tool to an accurate physics‐based device model enables to understand the complex mechanisms, which induce memory loss in the non‐volatile memristor under both SET and RESET stimuli, opening up new interesting application scenarios. The multidisciplinary field of memristors calls for the necessity for theoretically‐inclined researchers and experimenters to join forces, merging complementary expertise and technical know‐how, to develop and implement rigorous and systematic techniques to design variability‐aware memristor‐based circuits and systems. The availability of a predictive physics‐based model for a memristor is a necessary requirement before commencing these investigations. An interesting dynamic phenomenon, occurring ubiquitously in non‐volatile memristors, is fading memory. The latter may be defined as the appearance of a unique steady‐state behavior, irrespective of the choice of the initial condition from an admissible range of values, for each stimulus from a certain family, for example, the DC or the purely‐AC periodic input class. This paper first provides experimental evidence for the emergence of fading memory effects in the response of a TaOx redox‐based random access memory cell to inputs from both of these classes. Leveraging the predictive capability of a physics‐based device model, called JART VCM v1, a thorough system‐theoretic analysis, revolving around the Dynamic Route Map graphic tool, is presented. This analysis allows to gain a better understanding of the mechanisms, underlying the emergence of history erase effects, and to identify the main factors, that modulate this nonlinear phenomenon, toward future potential applications.

Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Engineering Oxide Resistive Switching Materials for Memristive Device Application

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Spectromicroscopic Insights for Rational Design of Redox-Based Memristive Devices

Interfacial Redox Processes in Memristive Devices Based on Valence Change and Electrochemical Metallization.

Solution-processed resistive switching memory devices based on hybrid organic-inorganic materials and composites.

Resistance Switching Non-Volatile Random Access Memory and Its Materials

Interface Engineering With Mos2-Pd Nanoparticles Hybrid Structure For A Low Voltage Resistive Switching Memory

Resistive Switching Mechanism of A Pr0.7ca0.3mno3-Based Memory Device and Assessment of Its Suitability for Nano-Scale Applications

Resistive Switching Materials for Information Processing

Design of a Controllable Redox‐Diffusive Threshold Switching Memristor

A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification

Reliable Memristive Switching Empowered by Ag/NiO/W ReRAM Configuration for Multi‐Level Non‐Volatile Memory Applications

Investigation of a Submerging Redox Behavior in Fe2O3 Solid Electrolyte for Resistive Switching Memory

Purely electronic nanometallic resistance switching random-access memory

Nanobatteries in redox-based resistive switches require extension of memristor theory

Highly Robust Organometallic Small-Molecule-Based Nonvolatile Resistive Memory Controlled by a Redox-Gated Switching Mechanism.

The Unveiling Switching Mechanism of Oxide Electrolyte Based ReRAM

Cmos Compatible Electrode Materials Selection in Oxide-Based Memory Devices

Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties