Abstract:The static random-access memory (SRAM) physical unclonable function (PUF) uses the power-up states of stored values to derive the identification code. Its lightweight circuit design makes it suitable for power-sensitive satellites. However, the SRAM PUF is significantly affected by high-energy particles and cosmic rays in space, which causes incorrect output of identity authentication codes and further leading to a degradation in reliability. Recently, the main research works are concerned about the impact of cosmic rays induced total ionizing dose effects on the SRAM PUF, and few reports discuss the high-energy particles induced single event effects on the SRAM PUF. This paper presents the reliability results of planar and FinFET-based SRAM PUFs after high-energy heavy ion experiments. Experimental results indicate that 3%–10% of the SRAM PUF bits change from their original power-on states, which demonstrate that ion-induced microdose effects degrade the reliability of SRAM PUFs. In addition, the three-dimensional technology computer-aided design simulation tool is used to analyze the physical mechanisms of the experimental phenomena. Simulation results show that the heavy ion-induced microdose effect ionizes and produces trapped charges at the silicon/insulation interface, which causes a slight change in transistor leakage current or a slight drift in threshold voltage. The physical mechanisms lead to an off-state current mismatch in the SRAM cell and finally affect the stored values after power-on.

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Heavy ion-induced microdose effects on the reliability of planar and FinFET-based SRAM physical unclonable functions

Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Total-Ionizing-Dose Effects on Resistance Stability of Programmable Metallization Cell Based Memory and Selectors

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Radiation-Induced Dose and Single Event Effects in Digital CMOS Image Sensors

Radiation-Induced Effects in SiC Vertical Power MOSFETs Irradiated at Ultra-High Doses

Evaluation of total-ionizing-dose effects on reconfigurable field effect transistors and SRAM circuits

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses

Radiation Damage Induced by Various Particles on CC4013 Devices

Radiation Effects of 50-Mev Protons on PNP Bipolar Junction Transistors

Radiation Effects on Mos and Bipolar Devices by 8 Mev Protons, 60 Mev Br Ions and 1 Mev Electrons

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors