Abstract:InP-based high electron mobility transistors (HEMTs) are potential candidates for sub-millimeter wave and terahertz satellite communications due to their ultrahigh frequency performance. Therefore, the study of their irradiation reliability is extremely urgent. In this paper, a 2 MeV proton irradiation experiment has been carried out in InP-based HEMTs, and damage mechanisms have been systematically studied, including dc and rf characteristics. The experimental results show that InP-based HEMTs have wondrously excellent radiation tolerance. The degradation of electrical characteristics occurs only when the irradiation fluence is higher than 1 × 10 13 H + /cm 2 . The drain saturation current and the maximum transconductance have, respectively, decreased by 7.1% and 5.4% at a fluence of 1 × 10 14 H + /cm 2 . Different from the other III–V HEMTs, the irradiated InP-based HEMTs exhibited an abnormality in the “peak collapse” of transconductance. Rf characteristics' parameters demonstrate slighter degradation compared to dc transconductance. Transmission line model (TLM) measurement and Schottky barrier calculation have shown that there is no noticeable degradation of an Ohmic contact and a Schottky contact; therefore, the main possible reason for device degradation comes from the interior of a semiconductor structure. Furthermore, device simulation indicates that defects introduced by irradiation on the upper and lower heterojunction interface of the channel and the interface of the gate recess should be responsible for degradation. Our experiments show that InP-based HEMTs have excellent radiation resistance, and they have good prospects for applications in radiation environments.

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Investigations on proton-irradiation-induced spacer damage in deep-submicron MOSFETs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Impact of the Displacement Damage in Channel and Source/Drain Regions on the Dc Characteristics Degradation in Deep-Submicron Mosfets after Heavy Ion Irradiation

Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-mos 2 Tunneling Junctions

Effects of 5 MeV Proton Irradiation on Nitrided SiO2/4H-SiC MOS Capacitors and the Related Mechanisms

Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

New Concerns on Heavy Ion Irradiation Induced Variation Degradation in Nanoscale CMOS Devices

Effect of Proton Irradiation on Complementary Metal Oxide Semiconductor (CMOS) Single-Photon Avalanche Diodes

X-Ray and Proton Radiation Effects on 40 Nm CMOS Physically Unclonable Function Devices

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Statistical Analysis on the Effects of Heavy Ion Irradiation on 65 Nm Bulk Silicon MOS Devices

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET

Comparison of total ionizing dose effects in SiC MOSFETs with double trench versus asymmetric trench

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Study of the Dose Rate Effect of 180 Nm Nmosfets

Degradation in super-junction MOSFET under successive exposure of heavy ion strike and gamma ray irradiation

Experimental and simulation studies of radiation‐induced single event burnout in SiC‐based power MOSFETs