Abstract:In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10 4 ion/cm 2 , and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10 4 ion/cm 2 , so when the LET value is 37.3 MeV·cm 2 /mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N – drift layer and the N + substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

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Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions

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Heavy Ion Induced Electrical Property Degradation in Sub-100 Nm Bulk Silicon MOS Devices

Total Ionizing Dose Effect and Single Event Burnout of VDMOS with Different Inter Layer Dielectric and Passivation.

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Effects of heavy ion irradiation on ultra-deep-submicron partially-depleted SOI devices

The Impact of Heavy Ion Irradiation on the Performance of Novel REDI LDMOS Power Devices

Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

Impact of TID radiation on hot-carrier effects in 65NM bulk Si NMOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Impact of the Displacement Damage in Channel and Source/Drain Regions on the Dc Characteristics Degradation in Deep-Submicron Mosfets after Heavy Ion Irradiation

Investigation on TID tolerance of 65nm bulk silicon nMOSFETs

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Degradation of VDMOS Under Simultaneous and Sequential Stress of Gamma Ray Irradiation and Annealing Process

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Impact of Proton-Radiation-Induced Spacer Damage on the Dc Characteristics Degradation in Deep-Submicron Metal-Oxide-Semiconductor Field Effect Transistors

Impact of Heavy-Ion Irradiation in an 80-V Radiation-Hardened Split-Gate Trench Power UMOSFET