Abstract:Characteristics of displacement defects in n-p-n bipolar junction transistors (BJTs) caused by heavy ions with various nonionizing energy loss (NIEL) values are studied in this paper. The key electrical parameters are measured in situ during irradiation. Behavior of the radiation-induced defects is characterized by deep level transient spectroscopy (DLTS) after the irradiation and the postirradiation annealing. Experimental results indicate that at a given displacement damage dose, the excess base current shows two ideality factors, which are close to 2 for small VEB and close to 1 for large V-EB, respectively. Moreover, the two ideality factors do not change with the increasing irradiation fluence. These results indicate that heavy ion irradiations mainly produce displacement damage on the BJTs. With increasing displacement damage dose, the change in the reciprocal of current gain caused by 10-40 MeV Si and 25 MeV O ions can be normalized in one line, which shows the displacement damage is independent of the NIEL value. Based on the DLTS analysis and isochronal annealing, at a given displacement damage dose, the characteristic of displacement defects caused by 40 MeV Si, 10 MeV Si, and 25 MeV O ion irradiations is different. Heavy ions with low NIEL value primarily generate isolated defects in the BJTs, while heavy ions with high NIEL value mainly produce clustered defects. Therefore, we conclude that although the displacement defects caused by heavy ions with various NIEL are different, the degradation of the electrical property of the BJTs is independent of NIEL.

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

The reliability of SiGe HBT under swift heavy ion irradiation

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Radiation effects on silicon bipolar transistors caused by 3–10 MeV protons and 20–60 MeV bromine ions

Radiation effects on bipolar junction transistors and integrated circuits produced by different energy Br ions

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Incident particle range dependence of radiation damage in a power bipolar junction transistor

Comparison of Neutron Irradiation Effects on the Electrical Performances of Sige Hbt and Si Bjt

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Radiation defects studies on silicon bipolar junction transistor irradiated by Br ions and electrons

Degradation mechanisms of current gain in NPN transistors

Radiation Damage and Defects in NPN Bipolar Junction Transistors Irradiated by Silicon Ions with Various Energies

Impact of bias conditions on performance degradation in SiGe HBTs irradiated by 10 MeV Br ion.

Electrical performance of electron irradiated SiGe HBT and SiBJT

Synergistic Effects of Ionizing Dose and Displacement Damage on SiGe Heterojunction Bipolar Transistors

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Characteristic of Displacement Defects in N-P-N Transistors Caused by Various Heavy Ion Irradiations