Abstract:The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 °C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore full depletion voltage significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect.

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

The reliability of SiGe HBT under swift heavy ion irradiation

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Bias Dependence of Ionizing Radiation Damage in Sige Hbts at Different Dose Rates

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Investigation of bias dependence on enhanced low dose rate sensitivity in SiGe HBTs for space application

Irradiation Effects on DC Current Gain of SiGe HBT

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Electrical performance of electron irradiated SiGe HBT and SiBJT

Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron