Abstract:InP-based high electron mobility transistors (HEMTs) are potential candidates for sub-millimeter wave and terahertz satellite communications due to their ultrahigh frequency performance. Therefore, the study of their irradiation reliability is extremely urgent. In this paper, a 2 MeV proton irradiation experiment has been carried out in InP-based HEMTs, and damage mechanisms have been systematically studied, including dc and rf characteristics. The experimental results show that InP-based HEMTs have wondrously excellent radiation tolerance. The degradation of electrical characteristics occurs only when the irradiation fluence is higher than 1 × 10 13 H + /cm 2 . The drain saturation current and the maximum transconductance have, respectively, decreased by 7.1% and 5.4% at a fluence of 1 × 10 14 H + /cm 2 . Different from the other III–V HEMTs, the irradiated InP-based HEMTs exhibited an abnormality in the “peak collapse” of transconductance. Rf characteristics' parameters demonstrate slighter degradation compared to dc transconductance. Transmission line model (TLM) measurement and Schottky barrier calculation have shown that there is no noticeable degradation of an Ohmic contact and a Schottky contact; therefore, the main possible reason for device degradation comes from the interior of a semiconductor structure. Furthermore, device simulation indicates that defects introduced by irradiation on the upper and lower heterojunction interface of the channel and the interface of the gate recess should be responsible for degradation. Our experiments show that InP-based HEMTs have excellent radiation resistance, and they have good prospects for applications in radiation environments.

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Investigation of total dose effects in SiGe HBTs under different exposure conditions

The reliability of SiGe HBT under swift heavy ion irradiation

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors

Research on Total Dose Effect of Double Polysilicon Self-Aligned NPN Transistors

Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices

The effect of proton irradiation on the characteristics of InP/InGaAs heterojunction

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs

Model Parameters and Degradation Mechanism Analysis of Indium Phosphide Hetero-Junction Bipolar Transistors Exposed to Proton Irradiation

Effects of neutron irradiation on SiGe HBT and Si BJT devices

In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt

Investigation of total ionizing dose effects in 4H-SiC power MOSFET under gamma ray radiation

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors