Abstract:The effect of bias condition on total ionizing dose (TID) of Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. The SiGe HBTs are set at forward, saturated, cutoff, and all-grounded biases during $^{60}{\hbox{Co}}\gamma $ irradiation. After each irradiation stops, the forward Gummel characteristic and inverse Gummel characteristic are measured, and a 3-D simulation of TID for SiGe HBT is performed. The mechanism of TID in different bias conditions is obtained by analyzing normalized excess base current. The results show that the TID damages are different at various irradiation biases of the SiGe HBT, and the worst bias between forward and inverse Gummel characteristics exhibits inconsistently. The reason could be attributed to different defects produced and accumulated in oxide layers by irradiation at various bias conditions. To be specific, the oxide trap charges ( ${{\hbox{N}}_{\rm ot}}$ ) in emitter/base (E/B) Spacer is important to the forward Gummel characteristic, yet the ${{\hbox{N}}_{\rm ot}}$ in LOCOS determines the inverse Gummel characteristic. However, after long time irradiation, the interface states ( ${{\hbox{N}}_{\rm it}}$ ) both in E/B Spacer and LOCOS dominate the damage to the SiGe HBT despite in forward Gummel mode or inverse Gummel mode.

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs

Investigation of total dose effects in SiGe HBTs under different exposure conditions

The reliability of SiGe HBT under swift heavy ion irradiation

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{co}}\gamma $ in SiGe HBT

Irradiation Effects on DC Current Gain of SiGe HBT

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

The Effects of 60 Co Γ-Ray Irradiation on the DC Characteristics of Enhancement-Mode AlGaN/GaN High-Electron-mobility Transistors

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Impact of Bias Conditions on Total Ionizing Dose Effects of &Lt;inline-Formula> &Lt;tex-Math Notation="latex">$^{60}{\hbox{co}}\gamma $&Lt;/tex-Math> &Lt;/inline-Formula> in SiGe HBT

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

Measurement and Analysis of Annealing Factor and Typical Dc Electronic Parameters for SiGe HBT Irradiated by Neutrons and Gamma Rays in a Pulsed Reactor

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Investigation of enhanced low dose rate sensitivity in SiGe HBTs by 60Co γ irradiation under different biases

Impact of Gamma Irradiation Effects on IGBT and Design Parameter Considerations

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Comparison of Total Dose Effects on Sige Heterojunction Bipolar Transistors Induced by Different Swift Heavy Ion Irradiation