Abstract:The response to transient irradiation of npn SiGe HBT (BG35 SiGe BiCMOS), i.e. device under test (DUT) was studied with online measurement of 1 MeV equivalent pulse neutron fluence of 0.8 × 1013n/cm2. The differently biased DUT1 and DUT2 in test circuit were irradiated in the first day with neutron fluence (0.8 × 1013n/cm2) termed as Fluence1 and with an additional neutron fluence (0.8 × 1013n/cm2) in the second day to make Fluence2 equals to 1.6 × 1013n/cm2. The experimental results show that pulsed neutron irradiation causes voltage surges in the DUTs exhibited by a negative and positive peak known to be radiation damage (RD). The RD in DUTs induced by pulse neutron Fluence1 initially created unstable displacement defects and the defects later reordered (cluster defects) to form more stable configurations via neutron Fluence2. The irradiated DUTs experienced online instantaneous annealing after 2.03 × 10−9 s and offline measurement (i.e. without irradiation) of DUTs showed recovery to normal mode of operation after 24 h annealing. The level of pulse peaks in the base voltage terminals of DUT1 and DUT2 were compared as Vb2 Fluence1 > Vb1 Fluence1 and Vb2 Fluence2 > Vb1 Fluence2. A comprehensive analysis of RD region in DUTs with reference to Area (A1, A2), Peak (P1, P2), Height (H), and Full width at half maximum (FWHM) were investigated.

Measurement and Analysis of Annealing Factor and Typical Dc Electronic Parameters for SiGe HBT Irradiated by Neutrons and Gamma Rays in a Pulsed Reactor

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

Degradation of SiGe HBT with reactor pulse neutron and gamma rays irradiation

Irradiation Effects on DC Current Gain of SiGe HBT

Effects of neutron irradiation on SiGe HBT and Si BJT devices

Electrical performance of electron irradiated SiGe HBT and SiBJT

Comparison of Neutron Irradiation Effects on the Electrical Performances of Sige Hbt and Si Bjt

The reliability of SiGe HBT under swift heavy ion irradiation

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Electrical Performance Analysis of Electron Irradiated SiGe HBT and Si BJT

Experimental study of pulse neutron irradiation damage in SiGe HBT

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Electron Irradiation Effects on Dc Electrical Performances of Sige Hbt in A Comparison with Sibjt

Irradiation effects of 25MeV silicon ions on SiGe heterojunction bipolar transistors

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs

In-suit investigation of DC characteristics degradation in SiGe HBT included by halogen lamp irradiation

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Total ionizing dose effects of domestic SiGe HBTs under different dose rate

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Degradation Differences in the Forward and Reverse Current Gain of 25 Mev Si Ion Irradiated Sige Hbt