Abstract:Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are extremely small, even after irradiation to very high fluences, enabling operation without cooling and at high temperatures. This study investigates the effect of neutron irradiation on 50$\mu$m p-n 4H-SiC diodes using current-voltage, capacitance-voltage, and charge collection efficiency (CCE) measurements up to neutron fluences of $1\times 10^{16}$ n$_{\text{eq}}$/cm$^2$. The leakage currents of the investigated devices remained extremely small, below 10 pA at 1.1 kV reverse bias. In the forward bias, a remarkable drop of the current was observed, which was attributed to an increased epi resistivity due to compensation of the epi layer doping by deep-level defects. The CCE was evaluated for alpha particles from a radioactive source, a 62.4 MeV proton beam at the MedAustron ion therapy center and using UV-TCT. The charge collection efficiency in reverse bias was shown to scale directly with the 1 MeV equivalent fluence $\Phi_{\text{eq}}$ as $\text{CCE} \propto \Phi_{\text{eq}}^{-0.63\pm0.01}$. A CCE better than 50% was able to be obtained for fluences up to $1 \times 10^{15}$ n$_{\text{eq}}$/cm$^2$. Because of the low currents in the forward direction, particle detection was also possible in forward bias, where the CCE was found to be increased relative to reverse bias. Furthermore, a significant dependency on the amount of injected charge was observed, with the CCE surpassing 100% in alpha and UV-TCT measurements, requiring further systematic investigation.

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by Γirradiation and High Temperature-High Pressure Treatment

Measurement and Analysis of Annealing Factor and Typical Dc Electronic Parameters for SiGe HBT Irradiated by Neutrons and Gamma Rays in a Pulsed Reactor

Experimental Study on Pulse Neutron and Gamma Ray Irradiation Effects on SiGe HBT

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Investigation of TID effects on electrical characteristics of GaN MIS-HEMT with LPCVD-grown SiN passivation

Effects of Gamma Irradiation on Switching Characteristics of SiC MOSFET Power Devices of Different Structures

Effects of Co-60 Gamma-Ray Irradiation on the DC and RF Characteristics of SiGe HBTs

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Degradation and Annealing Characteristics of NPN SiGe HBT Exposed to Heavy Ions Irradiation

Structural and Luminescent Properties of Electron-Irradiated Silicon

Neutron Radiation induced Effects in 4H-SiC PiN Diodes

Investigation of total dose effects in SiGe HBTs under different exposure conditions

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates