Abstract:The study focuses on analysing the high-level carrier lifetime ( ) in 4H silicon carbide (4H-SiC) PiN diodes under varying temperatures and proton implantation doses. The objective is to identify an empirical law applicable in technology computer-aided design (TCAD) modelling for SiC devices, describing the dependence of carrier lifetime on temperature to gain insights into how irradiation dose may influence the . We electrically characterize diodes of different diameters subjected to different proton irradiation doses and examine the variations in current-voltage (I-V) and ideality factor (n) curves under various irradiation conditions. The effects of proton irradiation on the epitaxial layer are analysed through capacitance-voltage (C-V) measurements. We correlate the observed effects on I-V, n, and C-V curves to the hypothesis of formation of acceptor-type defects related to carbon vacancies, specifically the Z defects generated during the irradiation process. The impact of irradiation on carrier lifetime is investigated by measuring using the open circuit voltage decay (OCVD) technique at different temperatures on diodes exposed to various H+ irradiation doses with constant ion energy. This investigation reveals the presence of a proportional relationship between 1/ and the dose of irradiated protons: the proportionality coefficient, referred to as the damage coefficient (K ), exhibits an Arrhenius-type dependence on temperature. OCVD-measured lifetime on the various diodes demonstrates a power-law dependence of lifetime on temperature. The exponent of this dependence varies with the irradiation dose, notably showing an increase in temperature dependence at the highest H+ ion dose. This suggests a threshold-like dependence on H+ irradiation dose in the -temperature relationship.

Carrier lifetime studies in diode structures on Si substrates with and without Ge doping

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

Investigation of high resistivity p-type FZ silicon diodes after 60Co γ-irradiation

Carrier Lifetime Dependence on Temperature and Proton Irradiation in 4H-SiC Device: An Experimental Law

Effect of Light Germanium Doping on Thermal Donors in Czochralski Silicon Wafers

Carrier transport in LPCVD grown Ge-doped β -Ga2O3/4H-SiC isotype heterojunction

Light-induced Degradation in N-Type Czochralski Silicon by Boron-Doping and Thermal Donor Compensation

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon

Investigation of the synergistic effects on 4H-SiC junction barrier Schottky Diodes after multiple irradiation

Carrier transport and luminescence properties of n-type GaN

Electron Radiation Effects on the 4H-Sic PiN Diodes Characteristics: an Insight from Point Defects to Electrical Degradation

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Annealing induced carrier activation and PL enhancement in Ge-on-Si grown by low temperature MBE

Effects of annealing on carrier lifetime in 4H-SiC