Abstract:Undoped and Si-doped GaN films were grown epitaxially on sapphire by reactive rf sputtering of GaAs (and Si) in Ar-N2 mixture. The resistivity of undoped GaN film grown at 100% N2 was ~2 x 105 {\Omega} cm, which reduced to ~1 {\Omega} cm in Si-doped film, revealing the effect of Si doping. With decrease of N2 from 100% to 75%, the carrier concentration of Si-doped films increased from ~7 x 1018 cm-3 to ~2 x 1019 cm-3, but remained practically unchanged as N2 was decreased to 20%, which is explained by effects due to saturation of Si doping and increase of Ga interstitials as well as compensation by N interstitials and Ga vacancies. Undoped and Si-doped films grown below 20% N2 displayed similar carrier concentrations (~1020 cm-3), due to dominance of Ga interstitials. Both undoped and Si-doped films were degenerate and displayed increase of mobility with carrier concentration and temperature, which was analyzed by the combined effect of ionized impurity and dislocation scattering, using compensation ratio as fitting parameter. At carrier concentrations below 1019 cm-3, the mobility was governed by both ionized impurity and dislocation scattering, while at higher carrier concentrations, ionized impurity scattering was found to dominate, limited by compensation due to acceptors. In spite of the degenerate character, the films displayed a small decrease of carrier concentration with temperature, along with a nearly linear decrease of mobility, which are explained by a marginal increase of compensation ratio with decrease of temperature, taking into account the band edge fluctuation effects.

Carrier transport and luminescence properties of n-type GaN

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Electrical transport in epitaxially grown undoped and Si-doped degenerate GaN films

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Does an Enhanced Yellow Luminescence Imply a Reduction of Electron Mobility in N-Type GaN?

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*

Effect of Lightly Si Doping on the Minority Carrier Diffusion Length in N-Type Gan Films

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Role of Edge Dislocation and Si Impurity in Linking the Blue Luminescence and Yellow Luminescence in N-Type GaN Films

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Yellow luminescence and carrier distribution due to polarity-dependent incorporation of carbon impurities in bulk GaN by Na flux

Optical Characteristics of C-Doped GaN

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

Carrier concentration dependent photoluminescence properties of Si-doped InAs nanowires

Band Gap Renormalization and Carrier Localization Effects in InGaN∕GaN Quantum-Wells Light Emitting Diodes with Si Doped Barriers

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

The Depth-Profiled Carrier Concentration and Scattering Mechanism in Undoped GaN Film Grown on Sapphire

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations