Abstract:Carbon doping is used to obtain semi-insulating GaN crystals. If the carbon doping concentration exceeds 5 × 1017 cm−3, the carbon atoms increasingly form triatomic clusters. The tri-carbon defect structure is unambiguously proven by the isotope effect on the defects' local vibrational modes (LVMs) originally found in samples containing carbon of natural isotopic composition (∼99% 12C, ∼1% 13C) at 1679 cm−1 and 1718 cm−1. Number, spectral positions, and intensities of the LVMs for samples enriched with the 13C isotope (∼99% and ∼50%) are consistently interpreted on the basis of the harmonic oscillator model taking into account the probability of possible isotope combinations. Including the polarization dependence of the LVM absorption, we show that the tri-carbon defects form a triatomic molecule-like structure in two crystallographically different configurations: a basal configuration with the carbon bonds near the basal plane and an axial configuration with one of the carbon bonds along the c axis. Finally, the disappearance of the LVMs under additional below-bandgap illumination is interpreted as defect recharging, i.e., the tri-carbon defects possess at least one charge state transition level within the bandgap and contribute to optical absorption as well as to the electrical charge balance.

Optical Characteristics of C-Doped GaN

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Optical and Electrical Properties of GaN: Mg Grown by MOCVD

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Optical and Structural Properties of Cr-Doped Gan Grown by Hvpe Method

Influence of Carrier Gas Flow Rate on the Optical Properties of GaN Films Grown by HVPE

Carrier transport and luminescence properties of n-type GaN

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Optical property studies of GaN films grown by MOCVD

Study of Optical Properties of Bulk GaN Crystals Grown by HVPE

The Movement of the Fermi Level in Heavily C Doped GaN

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Properties of GaN film grown by hydride vapor phase epitaxy

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Influence of Intrinsic or Extrinsic Doping on Charge State of Carbon and Its Interaction with Hydrogen in GaN

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Optical Transitions in Cubic Gan Grown by Metalorganic Chemical Vapor Deposition on Gaas (100) Substrate