Abstract:This work examines the carbon defects associated with recently reported and novel peaks of infrared (IR) absorption and Raman scattering appearing in GaN crystals at carbon ($^{12}C$) doping in the range of concentrations from $3.2*10^{17}$ to $3.5*10^{19} cm^{-3}$. 14 unique vibrational modes of defects are observed in GaN samples grown by hydride vapor phase epitaxy (HVPE) and then compared with defect properties predicted from first-principles calculations. The vibrational frequency shift in two $^{13}C$ enriched samples related to the effect of the isotope mass indicates six distinct configurations of the carbon-containing point defects. The effect of the isotope replacement is well reproduced by the density functional theory (DFT) calculations. Specific attention is paid to the most pronounced defects, namely tri-carbon complexes($C_N=C=C_N$) and carbon substituting for nitrogen $C_N$. The position of the transition level (+/0) in the bandgap found for $C_N=C=C_N$ defects by DFT at 1.1 eV above the valence band maximum, suggest that $(C_N=C=C_N)^+$ provides compensation of ${C_N}^-$. $C_N=C=C_N$ defects are observed to be prominent, yet have high formation energies in DFT calculations. Regarding ${C_N}$ defects, it is shown that the host Ga and N atoms are involved in the defect's delocalized vibrations and significantly affect the isotopic frequency shift. Much more faint vibrational modes are found from di-atomic carbon-carbon and carbon-hydrogen (C-H) complexes. Also, we note changes of vibrational mode intensities of $C_N$, $C_N=C=C_N$, C-H, and $C_N-C_i$ defects in the IR absorption spectra upon irradiation in the defect-related UV/visible absorption range. Finally, it is demonstrated that the resonant enhancement of the Raman process in the range of defect absorption above 2.5 eV enables the detection of defects at carbon doping concentrations as low as $3.2*10^{17} cm^{-3}$.

Investigation of carbon-related complexes in highly C-doped GaN grown by metalorganic vapor phase epitaxy

A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration

Fingerprints of carbon defects in vibrational spectra of gallium nitride (GaN) consider-ing the isotope effect

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Optical Characteristics of C-Doped GaN

Direct Evidence of Hydrogen Interaction with Carbon: C–H Complex in Semi-Insulating GaN

Deep Level Centers in Carbon-Doped High Resistivity GaN

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

Sub-bandgap Excited Photoluminescence Probing of Deep Defect Complexes in GaN Doped by Si, Ge and C Impurities

The Movement of the Fermi Level in Heavily C Doped GaN

Influence of Intrinsic or Extrinsic Doping on Charge State of Carbon and Its Interaction with Hydrogen in GaN

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates