Abstract:Carbon impurities in GaN form both acceptors and donors. Donor-to-acceptor ratios (DARs) determine the semi-insulating behavior of carbon-doped GaN (GaN:C) layers and are still debated. Two models are discussed; both can theoretically achieve semi-insulating behavior: the dominant acceptor model (DAM, DAR < 1) and the auto-compensation model (ACM, DAR = 1). We perform a capacitance–voltage analysis on metal/GaN:C/nGaN (n-doped GaN) structures, exhibiting Fermi-level pinning in GaN:C, 0.7 eV above the valence band maximum. This observation coupled with further interpretation clearly supports the DAM and contradicts the ACM. Furthermore, we reveal a finite depletion width of a transition region in GaN:C next to nGaN, where carbon acceptors drop below the Fermi level becoming fully ionized. Calculation of the potential drop in this region exhibits DAR values of 0.5–0.67 for GaN:C with total carbon concentrations of 10 18 cm − 3 and 10 19 cm − 3. Based on those results, we re-evaluate formerly published density functional theory (DFT)-calculated formation energies of point defects in GaN. Unexpectedly, growth in thermodynamic equilibrium with the bulk carbon phase contradicts our experimental analysis. Therefore, we propose the consideration of extreme carbon-rich growth conditions. As bulk carbon and carbon cluster formation are not reported to date, we consider a metastable GaN:C solid solution with the competing carbon bulk phase being kinetically hindered. DFT and experimental results agree, confirming the role of carbon at nitrogen sites as dominant acceptors. Under N-rich conditions, carbon at gallium sites is the dominant donor, whereas additional nitrogen vacancies are generated under Ga-rich conditions.

Influence of Intrinsic or Extrinsic Doping on Lattice Locations of Carbon in Semi-Insulating GaN

Influence of Intrinsic or Extrinsic Doping on Charge State of Carbon and Its Interaction with Hydrogen in GaN

Unambiguous Identification of Carbon Location on the N Site in Semi-insulating GaN.

The Movement of the Fermi Level in Heavily C Doped GaN

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Identification of carbon location in p-type GaN: Synchrotron x-ray absorption spectroscopy and theory

Enhanced ferromagnetism and tunable saturation magnetization of Mn/C-codoped GaN nanostructures synthesized by carbothermal nitridation.

Mechanism for Self-Compensation in Heavily Carbon Doped GaN

MOCVD Ge-on-GaAs and Its P-Type Doping Via Incorporating Ga Atoms

Optical Characteristics of C-Doped GaN

Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination

Influence of B doping and N doping on structure and electronic properties of graphene

Carbon doping of GaN: Proof of the formation of electrically active tri-carbon defects

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Effects of Doping on the Crystalline Quality and Composition Distribution in Ingan/Gan Structure Grown by Mocvd

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Ethylene for carbon doping of GaN by atmospheric pressure metal organic chemical vapor deposition

Migration of Carbon from Ga Sites to N Sites in GaN: a Combined PAS and Hybrid DFT Study

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Investigation of Defect Characteristics and Carrier Transport Mechanisms in GaN Layers with Different Carbon Doping Concentration