Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Structural, Optical and Magnetic Properties of Ga1−xMnxN Films Grown by MOCVD

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Effects of Nitrogen Vacancies Induced by Mn Doping in (ga,mn)n Films Grown by MOCVD

Structural And Magnetic Properties In Mn-Doped Gan Grown By Metal Organic Chemical Vapor Deposition

Reduction of Threading Edge Dislocation Density in N-Type Gan by Si Delta-Doping

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Studies on Structural and Magnetic Properties in Mn-Doped GaN

Mn Clusterisation in Ga1-Xmnxn

Study on the Dislocation of Epitaxial m-GaN Films Revealed by High Resolution X-Ray Diffration

Local Structure Around Mn Atoms in Cubic (ga,mn)n Thin Films Probed by Fluorescence Extended X-Ray Absorption Fine Structure

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Ab Initio Study Of Electronic And Magnetic Properties Of The C-Codoped Ga1-Xmnxn (10(1)Over-Bar0) Surface

Study of Dislocation Densities of Thick GaN Films

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Mn doping concentration dependent p–d hybridization in Ga1−xMnxN

Ab initio study of electronic and magnetic properties of the C-codoped Ga 1 − x Mn x N ( 10 1 ¯ 0 ) surface

Ab initio study of electronic and magnetic properties of the C-codoped Ga1−xMnxN „101̄0... surface

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Influence of Si Co-Doping on Magnetic, Electrical and Optical Properties of Ga1–x Mn X N Film Grown by MOCVD

The Local Structure of Ga1-xMnxN Dilute Magnetic Semiconductors Determined by X-ray Absorption Near Structure