Abstract:X‐Ray diffraction micro‐strain characterization is a technique which enables the quantification of threading dislocations by measuring the radial micro‐strain field surrounding these defects. This work demonstrates how to accurately perform these measurements on a broad range of GaN samples. In particular, for GaN grown on Si substrates with large stress gradient through the layer, the measurements need to be performed on the (20‐25) reflection to avoid being affected by a macro‐strain influence. A comparison of this characterization with cathodoluminescence and x‐ray diffraction lattice misorientations measurements shows differences in the measurement depth, so the results are affected by the various evolutions of dislocations densities through the layers of the different samples. Independently of the measurement depth, the analysis also highlights a dependence of the x‐ray measurements results on the type of sample, in particular the starting substrate. Micro‐strain measurements appear therefore as being well suited for the comparison of threading dislocations densities between similar GaN layers. It can be used to replace lattice misorientations measurements, or be associated with them to obtain an edge vs screw dislocations ratio.This article is protected by copyright. All rights reserved.

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

The Effect of Coalescence on Threading Dislocations in Gan Films

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

High-resolution XRD study of the effect of the annealing time on strain in Mg doped p-type GaN epitaxial films

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Study of Dislocation Densities of Thick GaN Films

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Effect of Annealing on Thermal Expansion Behavior of Free-Standing GaN

High-resolution X-ray Diffraction Analysis on HVPE-grown Thick GaN Layers

Characteristic Analysis of Undoped GaN Films with Different Thickness

Effects of Annealing Pressure of Nucleation Layer on High-Resistivity GaN

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Structure Dependence of Magnetic Properties for Annealed GaMnN Films Grown by MOCVD

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction