Abstract:High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in situ low-temperature grown GaN (LT-GaN) and ex situ physical vapour deposition AlN (PVD-AlN), are applied on cone-shaped NPSS. The coalescence process of GaN grains on the NPSS is modulated by adjusting the three-dimensional (3D) growth temperatures. Results show that low 3D temperatures help to suppress the Ostwald ripening of GaN grains on the NPSS, facilitating the uniform distribution of 3D GaN grains. Higher 3D temperatures lead to a decrease in the edge dislocation density, accompanied by an increase in residual compressive stress. Compared with LT-GaN NLs, PVD-AlN NLs can effectively improve the growth uniformity, suppress the tilting and twisting of GaN grains grown on NPSSs, and promote the orientation consistency of crystal facets during coalescence. The GaN films grown on NPSSs with PVD-AlN NLs exhibit a decrease in the coalescence time from 2000 s to 500 s, a reduction in dislocation densities from 2.8 x 108 cm-2 to 1.4 x 108 cm-2, and an increase in the residual compressive stress from 0.98 GPa to 1.41 GPa compared to those grown on LT-GaN NLs. This study elucidates trends in dislocation and stress evolution in GaN films on NPSSs with analysis of grain coalescence. The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

The Effect of Coalescence on Threading Dislocations in Gan Films

Effect of long anneals on the densities of threading dislocations in GaN films grown by metal-organic chemical vapor deposition

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Effect of the Starting Surfaces of Gan on Defect Formation in Epitaxial Co Thin Films

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization

Mosaic Structure Evolution in Gan Films with Annealing Time Grown by Metalorganic Chemical Vapour Deposition

Reduction of Threading Dislocations in AlGaN Layers Grown on AlN∕sapphire Templates Using High-Temperature GaN Interlayer

Defect Cluster-Induced X-Ray Diffuse Scattering in GaN Films Grown by MOCVD

Influence of Different Types of Threading Dislocations on the Carrier Mobility and Photoluminescence in Epitaxial Gan

Influence of Threading Dislocations on Physical Properties of GaN Epilayers