Abstract:The propagation behavior of threading dislocations (TDs) and the effects of Burgers vectors in hydride vapor phase epitaxy (HVPE) GaN bulk crystals generated on Na-flux-grown GaN and in a commercially available HVPE-grown GaN bulk crystal were investigated. Analyses based on chemical etching and transmission electron microscopy (TEM) revealed a close correlation between the etch pit sizes and the Burgers vector of these TDs. The existence of TDs with the unique Burgers vector b = 1m + 1c was observed for the first time ever using a large-angle convergent-beam electron diffraction technique and plan-view bright-field scanning TEM. Multi-photon excitation photoluminescence microscopy observations showed that TDs with b = 1c had a meandering morphology in contrast to the linear morphology of TDs with b = 1a, 1a + 1c, or 1m + 1c in both types of HVPE-grown GaN crystals. The inclinations of TDs with b = 1a and 1a + 1c in HVPE-grown GaN on Na-flux-grown GaN were greatly affected by large symmetrical hexagonal hillocks. The TDs with b = 1a were inclined in the slope directions of the hillock planes, while those with b = 1a + 1c were inclined in the a directions parallel or antiparallel to the a component in their Burgers vector. These inclinations were readily explained by the isotropic elastic theory of an individual TD. The hillocks were produced around pairs of parallel mixed TDs for which the a components were opposite to one another. This phenomenon was attributed to inclusions at the interface between the Na-flux-grown GaN substrate and the HVPE-grown layer. The origins of other TDs including unusual ones having b = 1m + 1c are also discussed herein.

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Threading Dislocation Density Comparison Between GaN Grown on the Patterned and Conventional Sapphire Substrate by High Resolution X-ray Diffraction

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Propagation of threading dislocations and effects of Burgers vectors in HVPE-grown GaN bulk crystals on Na-flux-grown GaN substrates

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Polar Dependence of Threading Dislocation Density in GaN Films Grown by Metal-Organic Chemical Vapor Deposition

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Threading Dislocation Annihilation in the GaN Layer on Cone Patterned Sapphire Substrate

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Low Density of Threading Dislocations in Aln Grown on Sapphire

Reduction of Threading Dislocations in AlGaN Layers Grown on AlN∕sapphire Templates Using High-Temperature GaN Interlayer

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

The Effect of Coalescence on Threading Dislocations in Gan Films

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition