Abstract:We investigate the formation of extended defects during molecular-dynamics (MD) simulations of GaN and InGaN growth on (0001) and ([Formula: see text]) wurtzite-GaN surfaces. The simulated growths are conducted on an atypically large scale by sequentially injecting nearly a million individual vapor-phase atoms towards a fixed GaN surface; we apply time-and-position-dependent boundary constraints that vary the ensemble treatments of the vapor-phase, the near-surface solid-phase, and the bulk-like regions of the growing layer. The simulations employ newly optimized Stillinger-Weber In-Ga-N-system potentials, wherein multiple binary and ternary structures are included in the underlying density-functional-theory training sets, allowing improved treatment of In-Ga-related atomic interactions. To examine the effect of growth conditions, we study a matrix of >30 different MD-growth simulations for a range of In x Ga 1-x N-alloy compositions (0 ≤ x ≤ 0.4) and homologous growth temperatures [0.50 ≤ T/T*m (x) ≤ 0.90], where T*m (x) is the simulated melting point. Growths conducted on polar (0001) GaN substrates exhibit the formation of various extended defects including stacking faults/polymorphism, associated domain boundaries, surface roughness, dislocations, and voids. In contrast, selected growths conducted on semi-polar ([Formula: see text]) GaN, where the wurtzite-phase stacking sequence is revealed at the surface, exhibit the formation of far fewer stacking faults. We discuss variations in the defect formation with the MD growth conditions, and we compare the resulting simulated films to existing experimental observations in InGaN/GaN. While the palette of defects observed by MD closely resembles those observed in the past experiments, further work is needed to achieve truly predictive large-scale simulations of InGaN/GaN crystal growth using MD methodologies.

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Strain Effects on InxAl1−xN Crystalline Quality Grown on GaN Templates by Metalorganic Chemical Vapor Deposition

Crystalline Quality of InxAl1-xN with Different Indium Contents Around Lattice-Matched to GaN

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Defects in IIINitrides Epilayers

Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers

Vacancy-type Defects in InxGa1–xN Alloys Probed Using a Monoenergetic Positron Beam

Molecular dynamics studies of defect formation during heteroepitaxial growth of InGaN alloys on (0001) GaN surfaces

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Atomic Evolution Mechanism and Suppression of Edge Threading Dislocations in Nitride Remote Heteroepitaxy

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Epitaxial Evolution on Buried Cracks in A Strain-Controlled Aln/Gan Superlattice Interlayer Between Algan/Gan Multiple Quantum Wells and A Gan Template

Transmission Electron Microscopy Investigation of Inversion Domain Boundary in Al0.65Ga0.35N Grown on AlN/sapphire Template

Indium Compositional Homogeneity in In$_{0.17}$Al$_{0.83}$N Epilayers Grown by Metal Organic Chemical Vapor Deposition

Temperature-Controlled Epitaxy of Inxga1-Xn Alloys and Their Band Gap Bowing

The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy