Abstract:Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical vapor deposition, and their basic properties and dislocation evolution characteristics were investigated thoroughly. With the insertion of a 100 nm thin AlGaN buffer layer, bow–warp analysis of the epitaxial wafers revealed excellent stress control for both the 6- and 8-inch wafers. HR-XRD and AFM analyses validated the high crystal quality and step-flow growth mode of GaN. Further, Hall measurements demonstrated the superior transport performance of AlGaN/GaN heterostructures. It is worth noting that dislocations tended to annihilate in the AlN nucleation layer, the thin AlGaN buffer layer, and the GaN buffer layer in the initial thickness range of 200–300 nm, which was indicated by ADF-STEM. To be specific, the heterointerfaces exhibited a significant effect on the annihilation of c-type (b = ) dislocations, which led to the formation of dislocation loops. The thin inserted layers within the AlGaN buffer layer played a key role in promoting the annihilation of c-type dislocations, while they exerted less influence on a-type (b = 1/3 ) and (a+c)-type (b = 1/3 ) dislocations. Within an initial thickness of 200–300 nm in the GaN buffer layer, a-type and (a+c)-type dislocations underwent strong interactions, leading to considerable dislocation annihilation. In addition, the EELS results suggested that the V-shaped pits in the AlN nucleation layer were filled with the AlGaN thin layer with a low Al content.

Transmission Electron Microscopy Investigation of Inversion Domain Boundary in Al0.65Ga0.35N Grown on AlN/sapphire Template

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

V-shaped Inversion Domains in InN Grown on C-Plane Sapphire

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Transmission Electron Microscopy Study of Epitaxial InN Thin Films Grown on C -Plane Sapphire

TEM Characterization of Domain Boundaries in a Ti–46Al–1Cr–0.2Si Alloy

Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing

Revealing microstructure and dislocation behavior in BAlN/AlGaN heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy

Threading Dislocations in In-polar InN Films and Their Effects on Surface Morphology and Electrical Properties

Behaviours of the lattice-polarity inversion in the AlN growth on the c-Al2O3(0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition

Direct Observation of Domain-Inverted Regions in Proton-Exchanged LiNbO 3 Using Transmission Electron Microscopy

Microstructure and Influence of Buffer Layer on Threading Dislocations in (0001) AlN/sapphire Grown by Hydride Vapor Phase Epitaxy

Inversion Domain Boundary in A Zno Film

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Compositional Modulation in in X Ga 1−x N: TEM and X-ray Studies

Buried dislocation networks designed to organize the growth of III-V semiconductor nanostructures

Exploration of TEM Sample Preparation for GaN Dislocations Based on in Situ FIB-SEM