Abstract:Most materials exhibit polymorphism; i.e., their crystallization capacity and behavior are different in different crystal structures. Thus, understanding the material microstructure, particularly the growth behavior of the crystal nucleus, is essential for generating high-performance gallium nitride (GaN) devices. In this study, the inhomogeneity of spontaneous nucleation in the pure liquid system and the growth patterns of GaN crystal nuclei with different structures were studied by a molecular dynamics method. The formation mechanisms of voids and lamellar structures which also appeared in the experimental preparation were analyzed. The lamellar structure formation was largely attributed to the diversity of the nucleus in the early crystallization stage. Introducing crystal nuclei to reduce the structural complexity is beneficial in improving the crystal quality. The morphology and growth rate of the zinc blende and wurtzite crystal nuclei were in great difference. Compared with defects, the dislocation of the pure liquid system was in continuous increase, while the dislocation of the crystal core system was in three states: rapid increase, slow decrease, and dynamic equilibrium. In the mechanical processing, unlike the fracture mechanism of a pure liquid system dominated by voids, continuous grain boundaries or the dislocation entanglement surface were the main reasons for the fracture of the crystal nuclei system. This study further investigated GaN spontaneous nucleation, growth patterns of the crystal nuclei, defect evolution, and the fracture mechanisms on the atomic scale, contributing to the preparation and mechanical processing of high-quality GaN.

Exploration of TEM Sample Preparation for GaN Dislocations Based on in Situ FIB-SEM

Utilization of FIB Technique in TEM Specimen Preparation of GaN-based Devices for Dislocation Investigation

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Application of multiphoton photoluminescence in characterization of GaN dislocations

Control of dislocation morphology and lattice distortion in Na-flux GaN crystals

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

An Easy Approach to Identify Dislocation Types in GaN Films Through Selective Chemical Etching and Atom Force Microscopy

TEM-based dislocation tomography: Challenges and opportunities

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Atomic Configurations of Basal Stacking Faults and Dislocation Loops in GaN Irradiated with Xe20+ Ions at Room Temperature

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

TEM Analysis on GaN/AlGaN SLS

Preparation of GaN-based cross-sectional TEM specimens by laser lift-off.

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Study of High-Quality GaN Growth and Fracture Mechanisms: Insights from Molecular Dynamics

Observation of Dislocation Etch Pits in GaN Epilayers by Atomic Force Microscopy and Scanning Electron Microscopy