Abstract:The role of threading dislocations in the intrinsic degradation of lateral GaN devices during high reverse bias stress tests (RBSTs) is largely unknown. We now present the results on lateral p-GaN/AlGaN/2DEG heterojunctions with a width of 200 μm in GaN-on-Si. A time-dependent permanent degradation of the heterojunction under high reverse bias and elevated temperatures can be observed, ultimately leading to a hard breakdown and device destruction. By using an integrated series p-GaN resistor, the device is protected from destruction and, consequently, the influence of dislocations on the degradation mechanism could be studied. Localization by emission microscopy could show that the transient current increase during a RBST is the result of the creation of a limited amount of highly localized leakage paths along the whole device width. We could establish a 1:1 correlation of leakage sites with a structural material degradation within the AlGaN barrier for nine individual positions on two different devices by planar transmission electron microscopy analysis. To unambiguously show whether dislocations in GaN-on-Si even should be considered a potential trigger for the RBST degradation in lateral heterojunctions, a combined planar and cross-sectional lamella approach was used for the first time for larger devices. This enabled the visualization of the three-dimensional propagation path of the dislocations close to the degradation sites. It was found that there is no statistically significant link between the material degradation and pre-existing dislocations. Our findings offer new insights into the GaN-on-Si material system, upon which upcoming power technologies are built upon.

Utilization of FIB Technique in TEM Specimen Preparation of GaN-based Devices for Dislocation Investigation

Exploration of TEM Sample Preparation for GaN Dislocations Based on in Situ FIB-SEM

Application of multiphoton photoluminescence in characterization of GaN dislocations

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Study on the Dislocations in GaN Films by Wet-Chemical Etching

Effects of Dislocation on High Temperature Transport Characteristics of Unintentionally Doped GaN

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

A Comparative Study of Methods for Calculating the Dislocation Density in GaN-on-Si Epitaxial Wafers

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Charge induced reconstruction of glide partial dislocations and electronic properties in GaN

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Dislocation generation mechanism analysis of GaN grown on patterned sapphire substrate

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

X‐Ray Diffraction Microstrain Analysis for Extraction of Threading Dislocation Density of GaN Films Grown on Silicon, Sapphire, and SiC Substrates

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer