Abstract:Deep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) were used to characterize defect states throughout the bandgap of unintentionally-doped InxAl1−xN grown by metal organic chemical vapor deposition for x = 0.18 (nominally lattice-matched) and x = 0.15 compositions. DLTS revealed broad peaks with energy levels of EC − 0.23 eV and 0.38 eV for In0.18Al0.82N and In0.15Al0.85N, respectively, tracking the difference in their conduction band minima [S. Schulz et al., Appl. Phys. Express 6, 121001 (2013)]. Capture kinetics studies revealed logarithmic filling behavior, which with the broad peaks, implies that an extended defect source is likely, consistent with threading dislocation densities (TDD) of ∼1 × 109 cm−2 measured for both structures. However, the trap concentration did not track the detailed TDD variation but instead followed the background oxygen content, which varied between 1.2 × 1018 cm−3 and 1.8 × 1018 cm−3 for the samples. Taken together with the logarithmic capture kinetics, this implies that dislocation-oxygen complexes could be the source for this trap. In spite of the high oxygen content in the samples, this state did not reveal DX-like behavior, supporting the assertion of an oxygen-dislocation complex as its likely source. DLOS also revealed additional states at EC − 1.63 eV, 2.09 eV, and 3.59 eV for In0.18Al0.82N and analogous states at EC − 1.70 eV, 2.70 eV, and 3.90 eV within In0.15Al0.85N. Lighted capacitance-voltage measurements indicated that the near mid-gap (EC − 2.09 eV and 2.70 eV) and near valence band (EC − 3.59 eV and 3.90 eV) states are their primary sources for carrier compensation.

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

Investigation of dislocations and traps in MBE grown p-InGaAs/GaAs heterostructures

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Comparative Study Of Deep Traps In Extended Wavelength Inxga1-Xas Photodetectors

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Hysteresis Phenomena of the Two Dimensional Electron Gas Density in Lattice-Matched Inaln/Gan Heterostructures

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Characterization of Traps in InAlN by Optically and Thermally Stimulated Deep Level Defect Spectroscopies

Spatial Identification Of Traps In Algan/Gan Heterostructures By The Combination Of Lateral And Vertical Electrical Stress Measurements

Insight Into Pbti In Ingaas Nanowire Fets With Al2o3 And Laalo3 Gate Dielectrics

LOCAL ELECTRONIC-STRUCTURES OF THE NATIVE DEFECTS IN MODULATION-DOPED ALAS/GAAS SUPERLATTICES

Investigation of deep level defects on Beryllium compensation doping of In053Ga047As/GaAs049Sb051 type-II superlattice photodiodes

Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice

Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks.

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile

Determination of structural defects in Hg1-xCdxTe multilayer materials

Acceptor Decoration of Threading Dislocations in ( Al , Ga ) N / Ga N Heterostructures

Identification of Trap States in P-Gan Layer of a P-Gan/algan/gan Power HEMT Structure by Deep-Level Transient Spectroscopy