Abstract:The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant charged defects is determining a consistent position of the corresponding defect levels, which is difficult to derive using standard supercell calculations. In a complementary approach, we take advantage of the embedded cluster methodology that provides direct access to a common zero of the electrostatic potential for all point defects in all charge states. Charged defects polarise a host dielectric material with long-range forces that strongly affect the outcome of defect simulations; to account for the polarisation we couple embedding with the hybrid quantum mechanical/molecular mechanical (QM/MM) approach and investigate the structure, formation and ionisation energies, and equilibrium concentrations of native point defects in wurtzite GaN at a chemically accurate hybrid-density-functional-theory level. N vacancies are the most thermodynamically favourable native defects in GaN, which contribute to the n-type character of as-grown GaN but are not the main source, a result that is consistent with experiment. Our calculations show no native point defects can form thermodynamically stable acceptor states. GaN can be easily doped n-type, but, in equilibrium conditions at moderate temperatures acceptor dopants will be compensated by N vacancies and no significant hole concentrations will be observed, indicating non-equilibrium processes must dominate in p-type GaN. We identify spectroscopic signatures of native defects in the infrared, visible and ultraviolet luminescence ranges and complementary spectroscopies. Crucially, we calculate the effective-mass-like-state levels associated with electrons and holes bound in diffuse orbitals...

Acceptor Decoration of Threading Dislocations in ( Al , Ga ) N / Ga N Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Control of dislocations in heteroepitaxial AlN films by extrinsic supersaturated vacancies introduced through thermal desorption of heteroatoms

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Tuning the electronic and optical properties of two-dimensional GaN/AlGaN heterostructure by vacancy defect

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Study on Threading Dislocations Blocking Mechanism of GaN∕AlxGa1−xN Superlattices

Dislocations And Related Traps In P-Ingaas/Gaas Lattice-Mismatched Heterostructures

On the insignificance of dislocations in reverse bias degradation of lateral GaN-on-Si devices

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

Donor and Acceptor Characteristics of Native Point Defects in GaN

Cathodoluminescence Study on the Impurity Behaviors at Threading Dislocations in GaN

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer

Strain Modulation-Enhanced Mg Acceptor Activation Efficiency Of Al0.14ga0.86n/Gan Superlattices With Aln Interlayer