Abstract:Journal of Applied Physics, Volume 131, Issue 18, May 2022. The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation in a wide doping range ([math] cm−3 up to [math] cm−3) and demonstrate GaN:Mg with low background impurity concentrations under optimized growth conditions. Dopant and impurity levels are discussed in view of Ga supersaturation, which provides a unified concept to explain the complexity of growth conditions impact on Mg acceptor incorporation and compensation. The results are analyzed in relation to the extended defects, revealed by scanning transmission electron microscopy, x-ray diffraction, and surface morphology, and in correlation with the electrical properties obtained by Hall effect and capacitance–voltage (C–V) measurements. This allows to establish a comprehensive picture of GaN:Mg growth by hot-wall MOCVD providing guidance for growth parameters optimization depending on the targeted application. We show that substantially lower H concentration as compared to Mg acceptors can be achieved in GaN:Mg without any in situ or post-growth annealing resulting in p-type conductivity in as-grown material. State-of-the-art [math]-GaN layers with a low resistivity and a high free-hole density (0.77 [math] cm and [math] cm[math], respectively) are obtained after post-growth annealing demonstrating the viability of hot-wall MOCVD for growth of power electronic device structures.

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Properties of Mg-Doped AlGaN Films

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Enhancing Hole Concentration in Aln by Mg : O Codoping: Ab Initio Study

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Activating Mg acceptors in AlN by oxygen: first principles calculations

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Strain Modulation-Enhanced Mg Acceptor Activation Efficiency Of Al0.14ga0.86n/Gan Superlattices With Aln Interlayer

Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN Via Mg Co-doped with 4D-Element (In)

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Mg-doping and free-hole properties of hot-wall MOCVD GaN

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Study of the heavily p-type doping of cubic GaN with Mg

Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides

Characterization of Mg-Doped Gan