Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (aln)5/(gan)1: the Strain Effect

Xin-He Jiang,Jun-Jie Shi,Min Zhang,Hong-Xia Zhong,Pu Huang,Yi-Min Ding,Ying-Ping He,Xiong Cao

DOI: https://doi.org/10.1088/0022-3727/48/47/475104

2015-01-01

Abstract:To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)(5)/(GaN)(1) superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy E-A, the formation energy E-f and the band gap E-g decrease with increasing the strain epsilon. The hydrostatic strain has a more remarkable impact on E-g and E-A than the biaxial strain. Both E-A and E-g have a linear dependence on the hydrostatic strain. For the biaxial strain, Eg shows a parabolic dependence on epsilon if epsilon <= 0 while it becomes linear if epsilon >= 0. In GaN and (AlN)(5)/(GaN)(1), E-A parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)(5)/(GaN)(1) can be reduced from 0.26eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.