Abstract:Abstract Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10 18 cm −3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGaδ-doping (aln)5/(gan)1: the Strain Effect

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Strain Modulation-Enhanced Mg Acceptor Activation Efficiency Of Al0.14ga0.86n/Gan Superlattices With Aln Interlayer

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Enhancing Hole Concentration in Aln by Mg : O Codoping: Ab Initio Study

Activating Mg acceptors in AlN by oxygen: first principles calculations

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Properties of Mg-Doped AlGaN Films

First-principles Calculation of AlN Electronic Structure by Doping with Mg and Zn

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Study of the heavily p-type doping of cubic GaN with Mg

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification

High conductivity and low activation energy in p-type AlGaN