Abstract:Incorporation of impurities in CuAlO2 provides an opportunities to modulate its electronic and optical properties, which can be exploited for the applications of optoelectronic devices. Among the various elements doped of CuAlO2, research on the codoping magnesium (Mg) with nitrogen (N) which may be a promising way for fabricating p-type CuAlO2 is still limited. Here, the first-principles calculation based on density functional theory was used to investigate the electronic and optical properties of Mg-doped, N-doped and Mg-N codoped CuAlO2. Compared with the undoped CuAlO2, the lattice parameters a and c of the Mg-N codoped CuAlO2 become larger and smaller, respectively. The acceptor level induced by 2p state of N in N-doped CuAlO2 is very deep. The undoped and Mg-doped CuAlO2 has indirect band gap. Whether the deep acceptor level or the indirect band gap, it is unfavorable to p-type doping or light emission. Due to the hybridization of 3p state of Mg and 2p state of N on the top of the valence band, the Mg-N codoped CuAlO2 not only has a direct band gap, but also has a shallower acceptor level (about 0.24 eV above the top of the valence band). The optical properties of CuAlO2 changes obviously after Mg-N codoping in the area of low energy. These results suggest that the possibility of enhancing the hole concentration in CuAlO2 by Mg-N dual-acceptor codoping which will be beneficial to the application of CuAlO2 in optoelectronic devices.

Enhancing Hole Concentration in Aln by Mg : O Codoping: Ab Initio Study

Activating Mg acceptors in AlN by oxygen: first principles calculations

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

First-principles study on electronic and optical properties of Mg-N dual-acceptor codoped CuAlO<sub>2</sub>

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

First-principles Calculation of AlN Electronic Structure by Doping with Mg and Zn

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Doping and compensation in heavily Mg doped Al-rich AlGaN films

Ferromagnetism in Mg-Doped Aln from Ab Initio Study

Band Edge Modulation And Interband Optical Transition In Aln: Mg-Al-O-N Nanotubes

Properties of Mg-Doped AlGaN Films

Codoping Of Magnesium With Oxygen In Gallium Nitride Nanowires

Strain Modulation-Enhanced Mg Acceptor Activation Efficiency Of Al0.14ga0.86n/Gan Superlattices With Aln Interlayer

First-principles Calculation of Electronic Structure of MgxZn1−xO Codoped with Aluminium and Nitrogen

Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy

Possible Efficient P-Type Doping of Aln Using Be: an Ab Initio Study

Ab initio study of the effects of Mg doping on electronic structure of Li(Co,Al)O2

Design of Shallow Acceptors in GaN Through Zinc–Magnium Codoping: First-Principles Calculation