Abstract:Mg-doped AlxGa1-xN (x = 0.23 and 0.35) alloys have been grown on GaN templates with high temperature AlN (HT-AlN) interlayer by metalorganic chemical vapor deposition (MOCVD). A combination of secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM) indicates the formation of more inversion domains in the high Al mole fraction Mg-doped AlGaN alloys at Mg concentration similar to 10(20) cm(-3). For Mg-doped Al0.23Ga0.77N epilayer, the analysis of cathodoluminescence (CL) spectra supports the existence of self-compensation effects due to the presence of intrinsic defects and Mg-related centers. The energy level of Mg is estimated to be around 193 meV from the temperature dependence of the resistivity measured by Hall effect experiments. And hole concentration and mobility are measured to be 1.2 x 10(18) cm(-3) and 0.56 cm(2)/V at room temperature, respectively. The reduction of acceptor activation energy and low hole mobility are attributed to inversion domains and self-compensation. Moreover, impurity band conduction is dominant in carrier transport up to a relatively higher temperature in high Al content Mg-doped AlGaN alloys. (C) 2018 Elsevier Ltd. All rights reserved.

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Doping and compensation in heavily Mg doped Al-rich AlGaN films

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Properties of Mg-Doped AlGaN Films

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Doping Characteristics of Mg in InGaAlP and GaP

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Study of the heavily p-type doping of cubic GaN with Mg

Influence of Mg source flowrate on the properties of isoelectronic in-doping p-AlGaN materials

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography

P-Type Doping Of Gan By Mg+ Implantation

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure