Abstract:Abstract Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, a desorption-tailoring strategy is proposed to juggle the carrier concentration and transport. Specific to the p-doping issue in Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole concentration as high as 8.1 × 10 18 cm −3 is thus realized at room temperature, which is attributed to the significant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path, as well as the highlighted Mg surface-incorporation by an intentional interruption for desorption. More importantly, benefiting from the constant ultrathin barrier thickness of only three monolayers via this approach, vertical miniband transport of holes is verified in the p-AlGaN superlattices, greatly satisfying the demand of hole injection in device application. 280 nm deep-ultraviolet light-emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices, which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency, thus leading to a 55.7% increase of the light output power. This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Design and Growth of P-Type AlGaN Graded Composition Superlattice

Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor

Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Molecular Beam Epitaxial Growth and Physical Properties of AlN/GaN Superlattices with an Average 50% Al Composition

Microstructure and dislocation evolution in composition gradient AlGaN grown by MOCVD

Growth and Characterization of Algan/Gan Superlattices

Growth and characterization of AlInN/GaN superlattices

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Structural and Optical Characteristics of Al (X) Ga1-X N/Aln Superlattice

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Investigation Of Mg Doping In High-Al Content P-Type Alxga1-Xn (0.3 < X < 0.5)

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

The Influence of AlN Interlayers on the Microstructural and Electrical Properties of P -Type AlGaN/GaN Superlattices Grown on GaN/sapphire Templates

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN