Properties of Si-doped a-plane AlGaN layers
Hu Chen,Xiong Zhang,Shuai Chen,Aijie Fan,Cheng Li,Liang Lu,Lifeng Rao,Jiadong Lyu,Guohua Hu,Yiping Cui
DOI: https://doi.org/10.1016/j.mssp.2020.105270
IF: 4.1
2020-11-01
Materials Science in Semiconductor Processing
Abstract:<p>The non-polar <em>a</em>-plane (11<span class="math"><math>2¯</math></span>0) n-type AlGaN epi-layers with high electron concentration were successfully grown on <em>r</em>-plane (1<span class="math"><math>1¯</math></span>02) sapphire substrates by metal organic chemical vapor deposition. High-resolution X-ray diffraction, room temperature photoluminescence spectrum, and Hall effect measurement were used to examine the influence of Si-doping on the crystalline quality, and the optical and electrical characteristics of the non-polar <em>a</em>-plane n-AlGaN epi-layer, respectively. The characterization results indicate that the electron concentration (EC), the electron mobility, and the crystalline quality for the non-polar <em>a</em>-plane n-AlGaN epi-layers could be improved significantly by optimizing the epitaxial growth conditions, especially the mole flow rate of SiH<sub>4</sub> in the Si-doping process. In fact, at a SiH<sub>4</sub> mole flow rate of 10.2 nmol/min, an EC as high as 1.25 × 10<sup>18</sup> cm<sup>−3</sup> and an electron mobility up to 3.86 cm<sup>2</sup>/V were achieved with the non-polar n-AlGaN epi-layer sample with the Al content of 41%.</p>
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied