Abstract:Electro‐thermal properties in N‐polar AlxGa1‐xN‐channel heterostructures (x = 15% to 90%) are reported and compared to their GaN counterparts by decoupling the contributions from various sublayers and interfaces. The thermally resistive AlGaN buffer layer predominantly leads to a relatively lower thermal conductivity in AlxGa1‐xN heterostructure. The electro‐thermal properties of such heterostructures remain nearly unchanged for a wide range of temperatures. Ultra‐wide bandgap semiconductor AlGaN is a promising candidate for high‐power and high‐frequency electronics. AlGaN‐heterostructures with nitrogen (N)‐polarity can offer added benefits of low‐leakage and large drive current. However, electro‐thermal transport in such heterostructures remains unexplored, although they are essential for electronic device functionality. Here, the thermal and electrical properties of N‐polar AlxGa1‐xN‐channel heterostructures (Al percentage, x = 15–90%) are explored and compared with their GaN counterpart. The thermal measurements uncover that the effective thermal resistance of the thin channel and barrier layers are similar in magnitudes for N‐polar‐ AlGaN and GaN heterostructures, however, the total effective thermal conductivity in N‐polar AlGaN heterostructure is ≈4× smaller. This reduction originates from the larger thermal resistance of the thick Al0.15Ga0.85N buffer layer within the AlGaN stack. N‐polar AlxGa1‐xN stack displays a thermal conductivity almost independent of temperature, measured from room temperature up to 200 °C. Hall measurements of an N‐polar Al0.30Ga0.70N‐channel heterostructure further reveal that electrical properties such as resistivity, carrier density, and mobility remain nearly unchanged with temperature, indicating the dominance of alloy‐phonon scattering in such material systems. These results offer important insights into material‐device co‐design and reliability of N‐polar AlGaN heterostructures.

Polarization-induced electrical conductivity in ultra-wide band gap AlGaN alloys

Polarization Induced Ultra-High Electron Concentration Up to 1020 Cm-3 in Graded AlGaN

Polarization Effects in Graded AlGaN Nanolayers Revealed by Current-Sensing and Kelvin Probe Microscopy

Polarization Doping: Reservoir Effects of the Substrate in Algan Graded Layers

Electron Mobility in Polarization-Doped Al0-0.2GaN with a Low Concentration Near 1017 Cm−3

Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen‐Polar AlGaN Heterostructures

Polarization Induced Hole Doping in Graded AlxGa1−xN (x = 0.7 ∼ 1) Layer Grown by Molecular Beam Epitaxy

Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Study of electrical and structural properties of non-polar a-plane p-AlGaN epi-layers with various Al compositions

Low-resistance Ohmic Contact on Polarization-Doped AlGaN/GaN Heterojunction

Polarization Induced High Al Composition AlGaN P–n Junction Grown on Silicon Substrates

Charge neutrality levels, barrier heights, and band offsets at polar AlGaN

Achieving semi-metallic conduction in Al-rich AlGaN: Evidence of Mott transition

Polarization Induced Doping in Graded Algan Films

High density polarization-induced 2D hole gas enabled by elevating Al composition in GaN/AlGaN heterostructures

Controlling a three dimensional electron slab of graded Al$_{x}$Ga$_{1-x}$N

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors