Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

YG Zhou,B Shen,T Someya,HQ Yu,J Liu,HM Zhou,R Zhang,Y Shi,YD Zheng,Y Arakawa
DOI: https://doi.org/10.1143/jjap.41.2531
IF: 1.5
2002-01-01
Japanese Journal of Applied Physics
Abstract:Polarization-induced charges in modulation-doped Al0.22Ga0.78N/GaN heterostructures were investigated using the Capacitance-Voltage (C-V) method. The C-V profiling of the Pt/Al0.22Ga0.78N/GaN Schottky diodes with various Al0.22Ga0.78N thicknesses shows significant differences due to the change of the polarization field in the heterostructures. Numerical simulation based on the experimental results indicates that the sheet density of the polarization-induced charges at the heterointerface is 6.78 x 10(12) cm(-2) in the samples with the Al0.22Ga0.78N thickness of 30 nm or 45 nm. The charge density reduces to 1.30 x 10(12) cm(-2) in the sample with the Al0.22Ga0.78N thickness of 75 nm. It is thought that the reduction of the polarization-induced charges at the heterointerface is due to the partial relaxation of the Al0.22Ga0.78N layer on GaN. This work provides a technique for quantitative characterization of the polarization-induced charges in AlxGa1-xN/GaN heterostructures.
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