Abstract:The principal obstacle to III-V compound semiconductors rivaling or exceeding the properties of Si electronics has been the lack of high-quality, thermodynamically stable insulators on GaAs (or on III-V materials in general). For more than four decades, the research community has searched for suitable III-V compound semiconductor gate dielectrics or passivation layers. The literature testifies to the extent of this effort, with representative, currently active approaches including sulfur passivation , silicon interface control layers (Si ICLs) , in situ molecular beam epitaxy (MBE) growth of Ga2O3(Gd2O3) , ex situ atomic layer deposition (ALD) growth of Al2O3 and HfO2 , wet oxidation of InAlP , jet vapor deposition (JVD) 12 of Si3N4, and ALD or PVD of HfO2 + Si ICL . The research on ALD high-k dielectric is of particular interest, since the Si industry is getting familiar with ALD Hfbased dielectrics and this approach has the potential to become a manufacturable technology. In the past years, we systematically studied the interface properties of ALD high-k dielectrics on GaAs, InGaAs with different In concentrations, InAs, InSb, InP, GaN and GaP using quasi-static CV, low-frequency high-frequency CV, conductance-method, charge pumping, and flatband shift vs. metal workfunction etc. approaches. The results show the Fermi-level in GaAs is not absolutely pinned at the mid-gap as Spicer model proposes. It can move almost across the whole bandgap with ~70% modulation efficiency. However, due to the wide bandgap of GaAs, existing interface traps and low density of states in GaAs, only weak inversion could be realized at ALD Al2O3/GaAs interface. This fact explains the observed inversion feature in quasi-static CV measurement at room temperature and in dark. It also explains why only low drain currents are obtained in inversion GaAs NMOSFETs and PMOSFETs using ALD Al2O3 as high-k dielectrics. Fermi-level in In-rich InGaAs is totally unpinned and strong inversion is realized as well as large drain current in inversion NMOSFETs. We also review detailed C-V and conductance-method measurements on high temperature annealed ALD Al2O3 dielectrics on GaAs and InGaAs and I-V characterization on fabricated enhancement-mode (E-mode) GaAs and InGaAs MOSFETs where the inversion channels are directly formed at the Al2O3/GaAs and Al2O3/InGaAs interfaces.

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Observation of Hole Accumulation at the Interface of an Undoped Ingan/Gan Heterostructure

Investigation of the Polarization-Induced Charges in Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling and Simulation

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Studies of Metal–ferroelectric–gan Structures

Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

On the Inversion in Gaas Metal-Insulator-Semiconductor Heterostructures

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Extraction of polarization-induced charge density in modulation-doped Alx Ga1-x N/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Metal-Ferroelectric-GaN Structures

Extraction of Polarization-Induced Charge Density in Modulation-Doped AlxGa1-xN/GaN Heterostructures Based on Schottky C-V Simulation

Fabrication and Characterization of Metalferroelectric-GAN Structures

Stability and Electronic Properties of GaN Phases with Inversion Symmetry to Inherently Inhibit Polarization

Influence of polarization-induced electric fields on optical properties of intersubband transitions in AlxGa1-xN/GaN double quantum wells

High-performance Inversion-mode High-k/InGaAs MOSFETs and Their Interface Studies - Invited

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors