Abstract:This Letter reports low-temperature (700 °C) growth of heavily Si-doped GaN (n ++ GaN) by metal-organic chemical vapor deposition with a resistivity as low as 1.9 × 10 −4 Ω·cm and an atomically smooth surface. Indium adatoms added during the growth of n ++ GaN play an important role in improving both the surface morphology and free electron concentration. On the one hand, acting as surfactant, they greatly boost the adatoms surface mobility at low growth temperature and mitigate Si-induced anti-surfactant effect. On the other hand, they can effectively suppress the formation of compensating defects, thus contributing to an extremely high electron concentration of 2.8 × 10 20 cm −3 . This high-quality n ++ GaN was further applied to the realization of Ohmic contacts with an ultra-low contact resistance for AlGaN/GaN high electron mobility transistors. The carrier gas was carefully modulated for the selective area epitaxy (SAE) of n ++ GaN to facilitate the nucleation of GaN on the dielectric mask, which effectively suppressed the undesired mass transport and resulted in a uniform SAE of n ++ GaN in the recessed source/drain regions. A nearly defect-free interface between the n ++ GaN and two-dimensional electron gas channel has been also realized, and the resistance induced by the interface was only 0.03 Ω·mm. As a result, an ultra-low contact resistance of 0.07 Ω·mm has been realized. This work lays a solid foundation for further improving the performance of GaN-based RF and power devices.

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Electrical Properties of Al/AlN/Si MIS Structure

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Photo-assisted Capacitance-Voltage Characterization of High-Quality Atomic-Layer-deposited Al2O3∕GaN Metal-Oxide-semiconductor Structures

Characterization of Cubic Phase MgZnO/Si(1 0 0) Interfaces

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures

Studies of Metal–ferroelectric–gan Structures

High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Polarization-Induced Charges In Modulation-Doped Alxga1-Xn/Gan Heterostructures Through Capacitance-Voltage Profiling

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Metal-Ferroelectric-GaN Structures

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Physical and electrical properties of a Si 3 N 4 Õ Si Õ GaAs metal – insulator – semiconductor structure

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

Fabrication and Characterization of Metalferroelectric-GAN Structures

Selective area epitaxy of degenerate n-GaN for HEMT ohmic contact by MOCVD