Abstract:Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices for monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance the performance of oxide semiconductor transistors. Atomic layer-deposited (ALD) indium oxide (In 2 O 3 ) has been reported with superior performance such as high drive current, high mobility, steep subthreshold slope, and ultrathin channel. In this work, the interface and bulk traps in the MOS gate stack of ALD In 2 O 3 transistors are systematically studied by using the C–V and conductance method. A low EOT of 0.93 nm is achieved directly from the accumulation capacitance in C–V measurement, indicating a high-quality gate oxide and oxide/semiconductor interface. Defects in bulk In 2 O 3 with energy levels in the subgap are confirmed to be responsible for the conductance peak in G P /ω versus ω curves by TCAD simulation of C–V and G–V characteristics. A high n-type doping of 1×10 20 /cm 3 is extracted from C–V measurement. A high subgap density of states (DOS) of 3.3×10 20 cm −3 eV −1 is achieved using the conductance method, which contributes to the high n-type doping and high electron density. The high n-type doping further confirms the capability of channel thickness scaling because the charge neutrality level aligns deeply inside the conduction band.

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Photo-assisted Capacitance-Voltage Characterization of High-Quality Atomic-Layer-deposited Al2O3∕GaN Metal-Oxide-semiconductor Structures

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Capacitance–voltage Study of SiO2/nanocrystalline Silicon/sio2 Double-Barrier Structures

High frequency CV measurements of SiC MOS capacitors

Capacitance-Voltage Characterization of Interfaces Between Positive Valence Band Offset Dielectrics and Wide Bandgap Semiconductors

Tunneling induced electron transfer in SiNx/AlGaN/GaN based metal–insulator–semiconductor structures

Evaluation of the Border Traps in LPCVD Si3N4/GaN/AlGaN/GaN MIS Structure with Long Time Constant Using Quasi-Static Capacitance Voltage Method

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

High-dielectric-constant Ta2O5/n-GaN metal-oxide-semiconductor structure

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

In-Situ Metalorganic Chemical Vapor Deposition and Capacitance-Voltage Characterizations of Al2o3 on Ga-Face Gan Metal-Oxide-Semiconductor Capacitors

Study on the AlN/Si(111) interface properties

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method