Abstract:High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $\beta$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $\beta$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $\beta$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices.

In-Situ Metalorganic Chemical Vapor Deposition and Capacitance-Voltage Characterizations of Al2o3 on Ga-Face Gan Metal-Oxide-Semiconductor Capacitors

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Effects of H 2 O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al 2 O 3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Photo-assisted Capacitance-Voltage Characterization of High-Quality Atomic-Layer-deposited Al2O3∕GaN Metal-Oxide-semiconductor Structures

Improved Characteristics of Gasb Mos Capacitors by Ozone Post Deposition Treatment

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Equivalent Oxide Thickness Scaling of Al2o3/Ge Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation

Metal Gate-Hfo2 Metal-Oxide-Semiconductor Capacitors on N-Gaas Substrate with Silicon/Germanium Interfacial Passivation Layers

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

High-Performance Ge MOS Capacitors by $\hbox{o}_{2}$ Plasma Passivation and $\hbox{o}_{2}$ Ambient Annealing

High Frequency Capacitance–voltage Characterization of Al2O3/ZrO2/Al2O3 in Fully Depleted Silicon-on-insulator Metal–oxide–semiconductor Capacitors

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition