Abstract:High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO 3 ) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O 2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO 3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO 3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage ( C – V ) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO 3 /4H-SiC and elevated the rectification ratio from 9.12 × 10 8 to 1.61 × 10 9 . C – V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( ) decreased from 9.10 × 10 11 to 5.53 × 10 11 cm −2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( ) also diminished from 4.00 × 10 11 to 3.58 × 10 11 cm −2 , and the oxygen vacancies were compensated by the oxygen atoms introduced from the O 2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO 3 thin film deposition using AD.

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Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

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Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

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Equivalent Oxide Thickness Scaling of Al2o3/Ge Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Interface Optimization and Performance Enhancement of Er2O3-Based MOS Devices by ALD-Derived Al2O3 Passivation Layers and Annealing Treatment

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

Effects of H 2 O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al 2 O 3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

In-Situ Metalorganic Chemical Vapor Deposition and Capacitance-Voltage Characterizations of Al2o3 on Ga-Face Gan Metal-Oxide-Semiconductor Capacitors

Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces