Abstract:High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO 3 ) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O 2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO 3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO 3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage ( C – V ) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO 3 /4H-SiC and elevated the rectification ratio from 9.12 × 10 8 to 1.61 × 10 9 . C – V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( ) decreased from 9.10 × 10 11 to 5.53 × 10 11 cm −2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( ) also diminished from 4.00 × 10 11 to 3.58 × 10 11 cm −2 , and the oxygen vacancies were compensated by the oxygen atoms introduced from the O 2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO 3 thin film deposition using AD.

Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

Improved Characteristics of Gasb Mos Capacitors by Ozone Post Deposition Treatment

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of ozone post deposition treatment on interfacial and electrical characteristics of atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates

Equivalent Oxide Thickness Scaling of Al2o3/Ge Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Interfacial and Electrical Properties of Hfalo/Gasb Metal-Oxide-Semiconductor Capacitors with Sulfur Passivation

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

Effects of H 2 O Pretreatment on the Capacitance–Voltage Characteristics of Atomic-Layer-Deposited Al 2 O 3 on Ga-Face GaN Metal–Oxide–Semiconductor Capacitors

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb 2 O 3 /GaSb MOS Capacitors with ALD-Driven Laminated Interlayers