Abstract:Germanium (Ge) has many exciting material characteristics, such as high carrier mobility and narrow bandgap in the near-infrared range. Thus it is suitable for various applications. A high-quality insulating film on Ge is required to apply Ge to novel electronic devices successfully. It is well known that GeO 2 on Ge has good electrical characteristics as a gate insulator or interlayer (IL), similar to SiO 2 on Si [1]. Unlike SiO 2 , however, GeO 2 is thermodynamically unstable under atmospheric pressure at typical oxidation temperatures (~400 °C) and volatilizes as GeO [2,3]. Several methods have been developed to suppress GeO volatilization from the surface. For example, transition metals such as yttrium (Y) have been introduced into GeO 2 . Yttrium (Y)-doped GeO 2 has excellent thermal, chemical, and electrical characteristics. In the capacitance–voltage measurement, it shows a low interface state density ( D it ) and a narrow hysteresis corresponding to the border trap (BT) density ( N bt ) of gate insulators [4]. Based on the above studies, we focused on metal Y deposition with subsequent thermal oxidation as an efficient alternative method to deposit Y-oxide as a gate insulator on Ge. This method has been studied to deposit Y 2 O 3 as a gate insulator on Si [5]. Moreover, metal oxidation has been used to form various gate insulators on Ge, such as Al [6] and Hf [7]. In this study, we expect a capping layer of Y and oxidized Y to suppress GeO volatilization and stabilize the interface. We fabricated and evaluated metal-oxide-semiconductor (MOS) capacitors and MOS field-effect transistors (FETs) with either a thermally oxidized Y or a thermally oxidized Ge oxide layer. The structural analysis found that the insulator was divided into three layers: Y 2 O 3 , YGeO 3 , and GeO x from the top. The oxidation temperature affected only the thickness of the bottom GeO x layer. We found that the Y-oxide gate stack had better electrical characteristics and a lower D it and N bt than the thermally oxidized GeO x insulator. In contrast, the D it –energy distribution and N bt temperature dependence of the Y-oxide gate insulator were similar to those of the GeO x gate insulator. We examined these observations, including the structural analysis results. We found that thermally oxidized Y had a distinct advantage over thermally oxidized Ge oxide: the possibility of controlling the structure and electrical characteristics of the Ge gate stack, such as the GeO x thickness and the BT signal origin. [1] H. Matsubara et al., Appl. Phys. Lett. 93 (2008) 032104. https://doi.org/10.1063/1.2959731 [2] S. K. Wang et al., J. Appl. Phys. 108 (2010) 054104. https://doi.org/10.1063/1.3475990 [3] S. K. Sahari et al., J. Phys. Conf. Ser. 417 (2013) 012014. https://doi.org/10.1088/1742-6596/417/1/012014 [4] C. Lu et al., J. Appl. Phys. 116 (2014) 174103. https://doi.org/10.1063/1.4901205 [5] M. Gurvitch et al., Appl. Phys. Lett. 51 (1987) 919. https://doi.org/10.1063/1.98801 [6] T. Ohno, et al., Appl. Phys. Lett. 107 (2015) 133107. https://doi.org/10.1063/1.4932385 [7] T. Hosoi et al., Microelectron. Eng. 109 (2013) 137. https://doi.org/10.1016/j.mee.2013.03.115 [8] W.-C. Wen et al., Mat. Sci. Semicond. Processing, accepted (2023).

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Electrical Properties of Ge MOS Capacitors with La2O3 Gate Dielectric Annealed in Different Gases

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Equivalent Oxide Thickness Scaling of Al2o3/Ge Metal-Oxide-Semiconductor Capacitors with Ozone Post Oxidation

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Fabrication and characterization of germanium n-MOS and n-MOSFET with thermally oxidized yttrium gate insulator: Formation of underlying germanium oxide and its electrical characteristics

(Invited) Thermally Oxidized Yttrium Oxide on Germanium for n-Mos Capacitor and Field-Effect Transistor

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP