Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

High-Performance Ge MOS Capacitors by $\hbox{o}_{2}$ Plasma Passivation and $\hbox{o}_{2}$ Ambient Annealing

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effective electrical passivation of Ge(100) for HfO 2 gate dielectric layers using O 2 plasma

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Ge Surface Passivation by GeO 2 Fabricated by N 2 O Plasma Oxidation

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Fabricating GeO 2 Passivation Layer by N 2 O Plasma Oxidation for Ge NMOSFETs Application

Effective Interface Passivation of A Ge/Hfo2 Gate Stack Using Ozone Pre-Gate Treatment and Ozone Ambient Annealing

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation