Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Fabricating GeO 2 Passivation Layer by N 2 O Plasma Oxidation for Ge NMOSFETs Application

Ge Surface Passivation by GeO 2 Fabricated by N 2 O Plasma Oxidation

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Investigation of Passivation of Ge Substrate by N2O Plasma and N2 plasma Treatment

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETs

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

High-Mobility Ge P- and N-Mosfets with 0.7-Nm EOT Using $\hbox{hfo}_{2}/\hbox{al}_{2}\hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stacks Fabricated by Plasma Postoxidation

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

High-Mobility Ge Pmosfet with 1-Nm EOT $\hbox{al}_{2} \hbox{o}_{3}/\hbox{geo}_{x}/\hbox{ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Aggressive EOT Scaling of Ge Pmosfets with HfO 2 /alo X /geo X Gate-Stacks Fabricated by Ozone Postoxidation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

Suppression of Ald-Induced Degradation of Ge Mos Interface Properties by Low Power Plasma Nitridation of Geo2

Electrical Properties of Ge Pmosfets with Ultrathin EOT HfO2/AlOx/GeOx Gate-Stacks and NiGe Metal Source/Drain

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Fabrication and MOS interface properties of ALD AlYO3/GeOx/Ge gate stacks with plasma post oxidation