Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.

Investigation of Different Interface Passivation on Germanium: RTO-GeO2 and Nitrogen-Plasma-passivation

Comparative Investigation into the Interface Passivation of Ge N- and P-Mosfets with Various 2D Materials

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Physical mechanism determining Ge p- and n-MOSFETs mobility in high Ns region and mobility improvement by atomically flat GeOx/Ge interfaces

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Ge CMOS Technology with Advanced Interface and Junction Engineering.

Investigation of Passivation of Ge Substrate by N2O Plasma and N2 plasma Treatment

Impact of Nitrogen Plasma Passivation on the Interface of Germanium Mos Capacitor

Research Progress in Ge-based Advanced Field Effect Transistor Technology

Impact of Channel Orientation on Electrical Properties of Ge P- and N-Mosfets with 1-Nm Eot Al2o3/Geox/Ge Gate-Stacks Fabricated by Plasma Postoxidation

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Interface Passivation Strategy for Ge Pmosfet from a TID Perspective

Impact of Back Interface Passivation on Electrical Properties of Ultrathin-Body Germanium-On-Insulator (geoi) Mosfets

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

MOS Interface Engineering for High-Mobility Ge CMOS

Physical Origins of High Normal Field Mobility Degradation in Ge P- and N-Mosfets with GeOx/Ge MOS Interfaces Fabricated by Plasma Postoxidation

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

MOS interface control of high mobility channel materials for realizing ultrathin EOT gate stacks

1-Nm-thick EOT High Mobility Ge N- and P-Mosfets with Ultrathin GeOx/Ge MOS Interfaces Fabricated by Plasma Post Oxidation

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Ge Surface Passivation by GeO 2 Fabricated by N 2 O Plasma Oxidation