Abstract:The exploitation of high-performance GaSb metal–oxide–semiconductor (MOS) devices is severely limited by unstable interface and Fermi-level pinning effect. Herein, bilayered dielectric engineering is proposed to improve and balance the interface and electrical properties of GaSb MOS capacitors. The impacts of stacking sequence and sublayer thickness ratio of HfO2 and Al2O3 gate dielectrics on the interface chemistry and transport modification of trimethylaluminum (TMA)-passivated GaSb MOS capacitors are systematically explored. The GaSb MOS capacitors configured with HfO2/Al2O3 stacking sequence and 7-/3-nm thickness ratio passivate trap charges effectively and demonstrate the balanced performances with an oxide charge density of $- 3.95\times 10^{{10}}$ cm−2, an interface state density of $10.19\times 10^{{12}}$ cm−2, a leakage current density of $8.49\times 10^{-{6}}$ A/cm2, a dielectric constant value of 20, as well as unpinned Fermi level. Besides, the transformation of leakage current conduction mechanisms (CCMs) with electric field and temperature is comprehensively expounded. What is more, low-frequency noise (LFN) is discussed for the first time in GaSb MOS devices and provides convincing evidence that GaSb MOS capacitor with laminated 7-nm HfO2/3-nm Al2O3 has less traps, which makes it a promising gate dielectric for future GaSb high-mobility transistor devices.

Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Interfacial and Electrical Properties of Hfalo/Gasb Metal-Oxide-Semiconductor Capacitors with Sulfur Passivation

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb 2 O 3 /GaSb MOS Capacitors With (NH 4 ) 2 S Solutions Passivation

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Improved Interfacial and Electrical Properties of Gasb Metal Oxide Semiconductor Devices Passivated with Acidic (nh4)(2)s Solution

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Quality Through A Novel Sulfuration Method

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Improved Characteristics of Gasb Mos Capacitors by Ozone Post Deposition Treatment

Sulfur Passivation for the Formation of Si-terminated Al 2 O 3/ SiGe(0 0 1) Interfaces