Abstract:MOSFETs using channel materials with low effective mass have been regarded as strongly important for obtaining high current drive and low supply voltage CMOS under sub 10 nm regime. From this viewpoint, attentions have recently been paid to III-V and Ge channels. However, one of the most critical issues for realizing Ge/III-V MOSFETs is gate insulator formation with superior MOS interface quality on Ge/III-V. In this paper, we focus on the possible solutions for gate stack technologies on Ge/III-V. As for Ge, GeO2/Ge interfaces have been regarded as promising. However, these interfaces have still employed thick GeO2 layers. Recently, we have succeeded in thin EOT gate stacks with Ge oxide interfacial layers by using ECR plasma post oxidation. The high quality Al2O3/GeOx/Ge gate stacks were fabricated by exposing the ALD Al2O3/Ge structures to ECR oxygen plasma and oxidizing the Ge surface through the very thin ALD Al2O3 layer. We present our recent results of the interface properties using this interface. As for InGaAs channels, we have also proposed a novel interfacial control technology utilizing InGaAs surface nitridation by ECR nitrogen plasma and successive post metallization annealing. This interfacial layer combined with an ECR sputtering SiO2 or an ALD Al2O3 gate insulator is shown to reduce D-it down to low order of 10(11) cm(-2)eV(-1). The physical origin of this D-it reduction and the role of the nitridation are discussed.

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Quality Through A Novel Sulfuration Method

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Property by Sulfuration and Nh3 Thermal Nitridation

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

The Effect of Nitridation and Sulfur Passivation for In0.53Ga0.47As Surfaces on Their Al/Al2O3/InGaAs MOS Capacitors Properties

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Mos Interface Control Technologies for Iii-V/Ge Channel Mosfets

Chemical and electrical characterization of AL2O 3/gaas interface improved by NH3 plasma pretreatment

Modulating the Interface Quality and Electrical Properties of Hftio/Ingaas Gate Stack by Atomic-Layer-Deposition-Derived Al2o3 Passivation Layer

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Interfacial Characteristics for LaAlO3 Gate Dielectric on S Passivated GaAs Substrate

A Novel Sulfur-Passivation Method and Magnetic Overlayers on Passivated III–V Semiconductor Surface

Improved Interface Properties Of Gan Metal-Oxide-Semiconductor Device With Non-Polar Plane And Aln Passivation Layer

The Progress of Sr Study on the Passivation of Semiconductor Surface in Nsrl

Sulfur Passivation of Gaas Metal-Semiconductor Field-Effect Transistor

Sulfurized Passivation of GaAs(100) Surfaces

Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation