Abstract:In this work, the interface chemistry and the reduction of GaAs surface species by using (NH4)(2)S solution prior to Gd-doped HfO2 (HGO) thin film deposition and the removal of Ga Oxides and elemental As by rapid thermal annealing (RTA) have been investigated by X-ray photoelectron spectroscopy (XPS). Additionally, the effect of the surface passivation and rapid thermal annealing on the electrical properties of MOS capacitors based on sputtering-derived HGO as gate dielectric on GaAs substrate has been detected by means of capacitance-voltage (C-V) and leakage current density-voltage (J-V) measurements. Based on electrical analysis, it can be noted that the constantly improvement of electrical properties, such as the decreases of flat band voltage (V-Fb), hysteresis (Delta Vib), oxide charge density (00,0, border trapped oxide charge density (N-bt) and leakage current density, have been observed. Especially, the dielectric constant of 16.72, flat band voltage yfb of 1.19 V, hysteresis Delta Vft, of 0.04 V, leakage current density of 1.54 x 10(-5) A/cm(2) at bias voltage of 1 V, total positive charge density and border trap charge density of 6.09 x 1012 CM-2 and 2.54 x 1011 cm(-2), respectively render 600 degrees C -annealed HGO thin films, potential high-k gate dielectrics in future CMOS devices. (C) 2017 Elsevier B.V. All rights reserved.

A Mild Electrochemical Sulfur Passivation Method for Gaas(100) Surfaces

Sulfurized Passivation of GaAs(100) Surfaces

Electrochemical Sulfur Passivation of GaAs

Passivation of Gaas Surface by Sulfur Glow Discharge

A Sulfur Passivation for Gaas Surface by an Organic Molecular, Ch3csnh2 Treatment

Progress In Sulfur Passivation Of Gaas Surfaces

Newly developed passivation technique of GaAs surfaces

Newly Developed Passivation of GaAs Surfaces and Devices

S2cl2 Treatment - A New Sulfur Passivation Method of Gaas Surface

Structural studies of sulfur-passivated GaAs (100) surfaces with LEED and AFM

Studies of Mg overlayer on GaAs(100) surface treated by CH3CSNH2

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

New surface passivation technique of GaAs by S2Cl2 treatment

Gallium sulfide thin film grown on GaAs(1 0 0) by microwave glow discharge

The Structural, Chemical and Electronic Properties of A Stable Gas/Gaas Interface

SRPES studies of CH3CSNH2 passivated GaAs (100) surface and Mg/s/GaAs interface

X-ray Photoelectron Spectroscopic Studies of Sulphur-passivated GaAsSurfaces

Study of HREELS and XPS on sulfide passivated GaAs (100) surface

Epitasxial Growth of ZnSe on S-Passivated GaAs (100) Substrate

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing